M5M28F101AFP |
RFQ for M5M28F101AFP Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| M5M28F101AFP | - | 99+ | 20 |
The MITSUBISHI M5M28F101A is high-speed 1048576-bit CMOS Flash Memories. This is suitable for the applications with microprocessor or micro-controller where on-board reprogramming is required. The M5M28F101A is fabricated by N-channel double polysilicon gate for memory and CMOS technology for peripheral circuits, and is available in 32pin plastic molded packages.
Features |
| ·Speed item ........................................................ 85 ns (max.) .......................................................100 ns (max.)·Power supply voltage ................................... VCC = 5V±0.5V·Write and erase voltage ..............................VPP = 12V±0.6V·Byte program and Chip erase·Auto program and Auto erase·Program/erase operation controlled by software command·Program/erase pulse controlled by an embedded timer·10000 program/erase cycles·Tri-state output buffer·TTL-compatible input and output in read and write mode·Contained device-identifier code·Incorporated data-protection·Available packaging for Surface Mount |
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
| V11 | All input or output voltage except VPP/A9 | With respect to Ground |
-0.6to7 |
V |
| V12 | VPP supply voltage |
-0.6to14.0 |
V | |
| V13 | A9 supply voltage |
-0.6to13.5 |
V | |
| Topr | Operating temperature |
-10to80 |
°C | |
| Tstg | Storage temperature |
-65to125 |
°C |
